Abstract: In this article modeling of back-biasing effects in Gallium Nitride (GaN) bidirectional high-electron-mobility transistors (HEMTs) is discussed. Specifically, static degradation of both ...
Abstract: We demonstrate that the shorter channel self-aligned top-gate (SA TG) coplanar indiumgallium- zinc oxide (IGZO) thin-film transistors (TFTs), with negative voltage applied to the back-gate, ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results