At Freescale™ we have been making low frequency, 48 Volt LDMOS devices since 2007 when the company rolled out the first MRF6V2300N plastic parts. These parts were designed for the 2 to 600 MHz, ...

STMicroelectronics is adding a broad range of devices to the STPOWER family of LDMOS transistors, which comprises three different product series optimised for RF power amplifiers (PAs) in a variety of ...

Based on the company’s Virtex family of platform FPGAs and XtremeDSP solutions, the digital pre-distortion (DPD) reference design is optimized for Freescale Semiconductor’s RF power LDMOS devices for ...

Philadelphia, PA. Ampleon at IMS highlighted recently announced products, such as the BLF989 RF power transistor designed for UHF broadcast applications such as DVBT and UHF analog TV and the 200-W ...

M/A-COM, a unit of Tyco Electronics has two new LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistors designed for INMARSAT applications. INMARSAT is the satellite service that serves a ...

BARCELONA, Spain -- Feb. 11, 2008-- Xilinx Inc., the world's leading supplier of programmable logic solutions, today announced a new digital pre-distortion (DPD) reference design based on its ...

Toshiba Electronic Devices & Storage Corporation and Japan Semiconductor Corporation have together demonstrated a method for improving at the same time both the reliability and the performance of high ...

Ampleon has announced the BLU9H0408L-800P 800-W RF power transistor. Using the latest Gen9 (50V) LDMOS process technology it has been designed for use in high-power radar systems operating in the 400 ...

Recent advances in LDMOS device power density and performance have contributed to significant improvements in UHF power amplifier linearity, efficiency and reliability. Based on this technology, ...

Evolving niche markets, such as ICs for biomedical applications, are very challenging in respect to power consumption and on chip power dissipation, namely, wide range from ultra low power (ULP) ...